The Characteristic Analysis of DRAM MIM Capacitor and STT-MRAM LLG-based Model
碩士 === 國立臺灣大學 === 電子工程學研究所 === 107 === Since Samsung released 20nm DRAM products in 2015, DRAM has now migrated to the 1x, 1y, 1z era. The main challenge is how to maintain the sufficient capacitance in the limited area to prevent the sensing error as DRAM capacitor scaling. How to increasing the e...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/q6p6r9 |