Study on Fabrication and Characteristics of InAsyP1-y Metamorphic Buffer Layers for SWIR Photodetector
碩士 === 國立臺灣大學 === 電子工程學研究所 === 107 === In this paper, the fabrication process and photoelectric characteristics of short wavelength infrared detector are analyzed. We have designed two detectors with bandgap of 1.9 μm and 2.2 μm respectively. We used InGaAs as an absorption layer and developed InAsP...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/wjw3pc |