Study of the Transient Current Peak Characteristics in Al/SiO2/Si Tunnel Diode Structure and Its Applications
碩士 === 國立臺灣大學 === 電子工程學研究所 === 107 === In this thesis, the significant transient current peak is observed in the Id-Vd curve for MIS structure with dox = 4 ~ 10 nm, and it is related to the recombination rate of electron-hole pairs. For the Al/SiO2/Si(p) device, the transient current peak occurs at...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/438736 |