Fabrication and Characterization of GeSn n+/p Diodes with High JON/JOFF Ratios
碩士 === 國立臺灣大學 === 電子工程學研究所 === 107 === Germanium-Tin (GeSn) alloys with a high carrier mobility are a promising channel material for next-generation CMOS technology. As the Sn fraction of GeSn alloysis higher than 8 ~ 11 %, GeSn becomes a direct-bandgap material, where more electrons would populate...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86cwcf |