Crystal growth and characterization of layered GeSe and GaTe with in -plane anisotropy
碩士 === 國立臺灣科技大學 === 應用科技研究所 === 107 === Layered-type GeSe and GaTe crystals were grown by Chemical Vapor Transport (CVT) method using iodine (I2) as the transport agent. The required temperature of GeSe and GaTe were set at 600 °C and 900 °C with temperature gradient of -4° C/cm that could be grown...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/x683d8 |