A Retention-Error Mitigation Method based on TLC NAND Flash Memory

碩士 === 國立臺灣科技大學 === 電子工程系 === 107 === Since NAND flash memory has limited P/E cycles, it could be unusable after exceeding the limited P/E cycles, and the main reason is the wear-out phenomenon in the flash memory cell. Under the influence of this phenomenon, any data can only be safely stored in th...

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Bibliographic Details
Main Authors: Wei-Hao Wu, 巫偉豪
Other Authors: Chin-Hsien Wu
Format: Others
Language:zh-TW
Published: 2019
Online Access:http://ndltd.ncl.edu.tw/handle/ud276z