A Retention-Error Mitigation Method based on TLC NAND Flash Memory
碩士 === 國立臺灣科技大學 === 電子工程系 === 107 === Since NAND flash memory has limited P/E cycles, it could be unusable after exceeding the limited P/E cycles, and the main reason is the wear-out phenomenon in the flash memory cell. Under the influence of this phenomenon, any data can only be safely stored in th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ud276z |