| Summary: | 碩士 === 國立臺灣科技大學 === 機械工程系 === 107 === In the semiconductor industry, variations in the downforce of wafers during chemical mechanical polishing / planarization, CMP polishing might cause some defects such as surface scratches, warpage, and corrosion. These defects can have a serious impact on the yield of production. If the pressure, temperature and other process parameter can be observed in-situ, the correlation between the weight change curves during polishing, the material removal rate and surface roughness can be further analyzed, in order to obtain optimal polishing effect. Therefore, this study aims to develop a Smart Wafer equipment.
With Windows device, Android device and Smart Wafer device, it includes force sensors and temperature sensor to measure and then transport by the wireless transmission module. It can detect the force changes and temperature changes from the polishing head to the wafer. It is also used for in-situ dynamic signal on any CMP machine.The reaserch using the equipment verifies differents kinds of wafer under the same CMP parameter process to measure the force change, wafer surface roughness, and temperature change at the different positions. The average weight values from force sensors have high correlation to the wafer thickness. The temperature has the same trend to the change of polishing pad. It observes that the forced situations at different positions have related to each other. In the case of Slurry condition, the polishing results are well-distributed. The researches are expected to be applied to chemical mechanical planarization and wafer polishing processes in the future as a benchmark for improving CMP process.
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