Growth and Application of Diamond-like Carbon thin film by Hybrid Plasma Chemical Vapor Deposition System

• Main Authors: Chih-Wei Hung, 洪偉智
• Other Authors: Wen-Cheng Ke
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/85wbw6

碩士 === 國立臺灣科技大學 === 材料科學與工程系 === 107 === In this study, a home made hybrid chemical vapor deposition system (Hybrid Plasma CVD, HPCVD) was used to grow a diamond-like carbon film on silicon substrate, and prepare high hardness diamond-like carbon film by adjusting the methane/hydrogen ratio flow, working pressure, radio frequency power and argon flow rate, etc. The film hardness was 10.7 GPa measured by a nanoindentation apparatus, which prepared under 6/94 sccm methane/hydrogen flow rate, 2 torr working pressure, and 625/250 W ECR/RF power, and 30 minutes growth time. In the hardness analysis, not only the nanoindentation detection, the content of sp3 and hydrogen content in diamond-like carbon film is also related to the hardness of the diamond-like carbon film, which determined by Raman spectrum. In this study, we using two different wavelengths of the laser Raman system to measure G-band and D-band, which based on the empirical formula proposed by Ferrari in 2005. After Gaussian fitting G-peak by D-band and G-band, Disp(G) can be calculated using empirical formula. The dispersion rate of G is brought into the formula to figure out the internal sp3 content of the film is 64%, and the hydrogen content is obtained by the slope between the intensity of 1050 cm-1 and 1800 cm-1 peak in Raman spectroscopy. The hydrogen content of the film is about 43% after calculating the empirical formula with the slope. We attempt to use the diamond-like carbon film as the passivation layer on silicon substrate in another chapter of this study. The minority carrier lifetime is the key to determine the passivation effect of the diamond-like carbon film, and we try to increase the carrier lifetime of passivation layer by optimizing methane/hydrogen ratio flow and growth time. As our experimental results, the film with 100nm thickness has the highest carrier life cycle measured in quasi-steady state, 9.85 us, which is prepared under 10/90 sccm methane/hydrogen ratio, 1 Torr working pressure, and 625/150 W ECR/RF power.