Comparison of Junctionless and Conventional Field Effect Transistors Based on Stacked Nanosheet Channels Structure
碩士 === 國立聯合大學 === 電子工程學系碩士班 === 107 === Under the rapid development of semiconductors, it faces the problem of shrinking component size. It will be a major challenge that how to suppress the short channel effects(SCEs) to reduce leakage current, and maintain excellent device performance. In this...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/8hbq3f |