Properties of Al-doped SnO2 Thin Films Prepared by Pulsed Laser Deposition
碩士 === 國立臺北科技大學 === 光電工程系 === 107 === In this study, 1-5% (atomic percent, at%) Aluminum - doped tin oxide (SnO2:Al) single crystalline films was prepared on α-Al2O3 (0001) substrates by pulsed laser deposition(PLD). The PLD used Nd:YAG laser. We changed the parameters such as substrate temperature(...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/ez5dw6 |