Investigation of Tantalum-Nitride-Gated Stress Engineering on HfAlO Ferroelectric Memory
碩士 === 國立臺北科技大學 === 材料科學與工程研究所 === 107 === In recent years, the transistors pursue smaller size, lower cost, higher speed and lower power consumption with the era of Internet of Things (IoT), Artificial Intelligence (AI), and Big Data. As devices dimension continuously scale down, the quantity of tr...
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| Format: | Others |
| Language: | zh-TW |
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2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/jeeg4b |