Analysis of Rapid Thermal Annealing on Hafnium Oxide
碩士 === 大同大學 === 電機工程學系(所) === 107 === As the size of the transistor required by the industry continues to shrink, the SiO2 (<3nm) used to fabricate the capacitor gate oxide layer will reach the limit of carrier tunneling. The laboratory developed the replacement of a conventional gate insulating...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4dha67 |