Influence of Phosphorus doped ZnO: N on P-type Zinc Oxide
碩士 === 大同大學 === 電機工程學系(所) === 107 === The main purpose of the research is using phosphoric acid to dope P-type ZnO:N semiconductor thin films. We use a DC magnetron sputtering system to deposit zinc nitride precursors, and use phosphoric acid to add hydrogen peroxide to form a phosphorus-doped zinc...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/c8fc6b |