Ultra-thin films Gallium Telluride compound semiconductors grown on sapphire (0001) by molecular beam epitaxy
碩士 === 大同大學 === 電機工程學系(所) === 107 === In this study, the gallium telluride (GaTe) thin films are grown on sapphire(0001) by molecular beam epitaxy. The high crystal quality GaTe thin films are demonstrated by varying the molecular flow ratio of Gallium and Tellurium and the substrate temperature. Re...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4839pb |