| Summary: | 碩士 === 元智大學 === 機械工程學系 === 107 === A two-dimensional axially symmetric model for Chemical-Mechanical Polishing (CMP) is established in this paper based on the SolidWorks Simulation. Whether the von Mises stress distribution on the wafer surface is consistent with the wafer surface Non-Uniformity distribution during the operation of Chemical Mechanical Polishing (CMP). And discuss the influence of polishing pad and carrier film material, thickness and pressure on wafer surface Non-Uniformity will be elucidated. Then the SolidWorks Simulation will be designed study through combing all the conditions and looks for the best combination of wafer surface Non-Uniformity. Then, the average effect of polishing pad and carrier film material, thickness and pressure influence on the wafer surface Non-Uniformity in all cases is plotted by the average, and whether the best combination of the main effect diagram is inferred and found. The best combination results are similar, so that in the future looking for a better combination of wafer surface Non-uniformity can reduce the number of simulated groups.
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