High-brightness AlGaInP light emitting diodes with air column of mirror structure fabricated by twice wafer bonding
碩士 === 元智大學 === 電機工程學系丙組 === 107 === In this study, the metal eutectic bonding technique was used to laminate the AlGaInP epitaxial layer onto the molybdenum substrate to form a p-side up structure, and the p-GaP was roughened to destroy the total reflection surface. In the n-side, n-GaAs is formed...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/h97w66 |