A Study of Single-Layer Charge Trap MemTransistor with the HfO2 and Al2O3-based Gate Stack on Germanium Substrate for Neural Network
碩士 === 國立交通大學 === 電子研究所 === 108 === In this thesis, first, we fabricated Ge p-MOSCAPs based on the HfO2 and Al2O3-based gate stack before fabricating charge trap memtransistors. We compared Ge p-MOSCAPs based on three thicknesses of trapping layer. We found that the thicker trapping layer was; the l...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/gyx8j6 |