A Study of Charge Trap MemTransistor Based on the ZrO2-based Gate Stack on p-type Germanium Substrate for AI Neural Network
碩士 === 國立交通大學 === 電子研究所 === 108 === In this thesis, first, we fabricated Ge p-MOSCAPs based on the ZrO2-based gate stack, including: (1) single-layer p-ZrO2, (2) tA/tZ/tA, (3) pA/pZ/pA, (4) pA/tZ/pA, (5) pA/tZ/pA/tZ/pA, where t and p represented materials deposited by thermal ALD and PEALD, A was Al...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/wxd7v3 |