Field Plate Structure TCAD Simulation and Development for High Frequency and High Voltage GaN HEMT Applications
碩士 === 國立交通大學 === 國際半導體產業學院 === 108 === Compared with the popular silicon-based devices nowadays, GaN-based devices have many advantages in physical properties, such as high electron mobility, high electron speed, high operation temperature, and high breakdown voltage. In the application fields of h...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2019
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Online Access: | http://ndltd.ncl.edu.tw/handle/g76u5k |