Field Plate Structure TCAD Simulation and Development for High Frequency and High Voltage GaN HEMT Applications
碩士 === 國立交通大學 === 國際半導體產業學院 === 108 === Compared with the popular silicon-based devices nowadays, GaN-based devices have many advantages in physical properties, such as high electron mobility, high electron speed, high operation temperature, and high breakdown voltage. In the application fields of h...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/g76u5k |