Discuss and improvement the question of ozone concentration is unstable in the wafer cleaning process

• Main Authors: CHANG, TA-CHENG, 張大成
• Other Authors: CHEN, HSING-SUNG
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/4hy5bc

碩士 === 國立虎尾科技大學 === 材料科學與工程系材料科學與綠色能源工程碩士在職專班 === 108 === Wafer cleaning is a very important process for wafer quality, which has a significant impact on the quality of silicon wafers, such as LPD (Light Point defect), MCL (Metal Contamination Level), etc. Different cleaning chemicals and cleaning conditions were used during the cleaning process, such as alkali cleaning, RCA, HF, ozone water, etc., for different wafer process. In most of the cleaning process, ozone water washing is scheduled for the final process. Owing to the oxidizing property of ozone, ozone water washing process on silicon wafers can remove organic substances and the particles from the wafer attached on the surface of the wafers, and to ionize the metal to reduce metal contamination and produce an oxide film on the surface of the wafer to protect the wafer’s surface. During the ozone water cleaning process, the ozone concentration of ozone water is influenced by the ozone water flow rate. The ozone concentration of ozone water is easily reduced and unstable during the transportation, and this makes the ozone generator supply higher concentration ozone water to reach the requirement of the ozone water cleaning process. This may result in poor quality control for silicon wafer, and the life of ozone generator shortened and more water and power needed. This paper is mainly to explore and improve the problem of unstable concentration of ozone water during the wafer cleaning process.