Epitaxial growth of dilute nitride-arsenide compound semiconductors by molecular beam epitaxy
In[sub y]Ga[sub 1-y]As[sub1-x]N[sub x] containing a small amount of nitrogen (x<0.05) is a new narrow bandgap semiconductor alloy that has advantageous properties for the fabrication of optoelectronic devices. In this thesis, we seek to improve the material quality of InGaAsN and GaAsN by stud...
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| Format: | Others |
| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/2429/12782 |