Photoluminescence studies of the electron-hole droplet and the impurity band in Si(P)
The photoluminescence spectrum of phosphorus-doped silicon at 17 _ 3 19-3 dopant concentrations ranging from 1.2 x 10¹⁷ cm⁻³ to 4.0 x 10¹⁹ cm⁻³ is studied as a function of excitation intensity. The spectra are interpreted tn terms of two types of recombination events', one' attributed to...
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| Language: | English |
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2010
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| Online Access: | http://hdl.handle.net/2429/20919 |