Semi-insulating gallium arsenide-deep trapping levels, dislocations and backgating
Work is reported on three topics relating to problems which hold back the development of GaAs integrated circuits. These topics are deep trapping levels in the starting semi-insulating GaAs, the effect of dislocations on device characteristics, and backgating. (The latter is the influence of voltage...
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| Language: | English |
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University of British Columbia
2010
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| Online Access: | http://hdl.handle.net/2429/25141 |