Modelling the DC performance of GAAS Homojunction bipolar transistors
Two models, one analytical and one numerical, have been developed to predict the dc performance of GaAs homojunction bipolar transistors. In each case the minority carrier properties of lifetime and mobility have been described by polynomial fits to recent data. Bandgap narrowing in the emitter and...
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| Language: | English |
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University of British Columbia
2010
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| Online Access: | http://hdl.handle.net/2429/26306 |