Modelling the DC performance of GAAS Homojunction bipolar transistors

Two models, one analytical and one numerical, have been developed to predict the dc performance of GaAs homojunction bipolar transistors. In each case the minority carrier properties of lifetime and mobility have been described by polynomial fits to recent data. Bandgap narrowing in the emitter and...

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Main Author: Lee, Soon Peng
Language:English
Published: University of British Columbia 2010
Online Access:http://hdl.handle.net/2429/26306
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spelling ndltd-UBC-oai-circle.library.ubc.ca-2429-263062018-01-05T17:43:34Z Modelling the DC performance of GAAS Homojunction bipolar transistors Lee, Soon Peng Two models, one analytical and one numerical, have been developed to predict the dc performance of GaAs homojunction bipolar transistors. In each case the minority carrier properties of lifetime and mobility have been described by polynomial fits to recent data. Bandgap narrowing in the emitter and base regions has also been taken into account. The analytical model assumes uniform doping in the three regions of the transistor and is thus appropriate to predicting the performance of devices fabricated using epitaxial technologies. This model is also useful for carrying out sensitivity analyses. The importance of parameters such as regional widths and doping densities, minority carrier lifetimes and surface recombination velocity is examined here. The numerical model is useful for describing the performance of ion-implanted devices. Good agreement is obtained between results from the model and recent experimental data from prototype devices. Applied Science, Faculty of Electrical and Computer Engineering, Department of Graduate 2010-07-10T17:08:23Z 2010-07-10T17:08:23Z 1985 Text Thesis/Dissertation http://hdl.handle.net/2429/26306 eng For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use. University of British Columbia
collection NDLTD
language English
sources NDLTD
description Two models, one analytical and one numerical, have been developed to predict the dc performance of GaAs homojunction bipolar transistors. In each case the minority carrier properties of lifetime and mobility have been described by polynomial fits to recent data. Bandgap narrowing in the emitter and base regions has also been taken into account. The analytical model assumes uniform doping in the three regions of the transistor and is thus appropriate to predicting the performance of devices fabricated using epitaxial technologies. This model is also useful for carrying out sensitivity analyses. The importance of parameters such as regional widths and doping densities, minority carrier lifetimes and surface recombination velocity is examined here. The numerical model is useful for describing the performance of ion-implanted devices. Good agreement is obtained between results from the model and recent experimental data from prototype devices. === Applied Science, Faculty of === Electrical and Computer Engineering, Department of === Graduate
author Lee, Soon Peng
spellingShingle Lee, Soon Peng
Modelling the DC performance of GAAS Homojunction bipolar transistors
author_facet Lee, Soon Peng
author_sort Lee, Soon Peng
title Modelling the DC performance of GAAS Homojunction bipolar transistors
title_short Modelling the DC performance of GAAS Homojunction bipolar transistors
title_full Modelling the DC performance of GAAS Homojunction bipolar transistors
title_fullStr Modelling the DC performance of GAAS Homojunction bipolar transistors
title_full_unstemmed Modelling the DC performance of GAAS Homojunction bipolar transistors
title_sort modelling the dc performance of gaas homojunction bipolar transistors
publisher University of British Columbia
publishDate 2010
url http://hdl.handle.net/2429/26306
work_keys_str_mv AT leesoonpeng modellingthedcperformanceofgaashomojunctionbipolartransistors
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