Dislocations in gallium arsenide deformed at high temperatures
Test pieces of GaAs were cut from Czochralski grown <100> wafers. Prior to deformation the dislocation configuration was established by cathodoluminescence (CL). Etch pits produced by molten KOH on examined crystal surfaces coincided with the CL images. The test pieces were capped with Si₃N₄,...
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| Language: | English |
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University of British Columbia
2010
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| Online Access: | http://hdl.handle.net/2429/26700 |