Temperature and dislocation stress field models of the LEC growth of gallium arsenide
The temperature fields and resulting stress fields have been calculated for a growing GaAs crystal produced by the LEC process. The calculations are based in a finite element numerical thermoelastic stress analysis. The calculated temperature fields have been compared to reported experimental measur...
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| Language: | English |
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University of British Columbia
2010
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| Online Access: | http://hdl.handle.net/2429/27525 |