The effect of base grading on the gain and high frequency performance of AlGaAs/GaAs heterojunction bipolar transistors
A comprehensive, one-dimensional, analytical model of the graded-base AlGaAs/GaAs heterojunction bipolar transistor is presented, and used to examine the influence of base grading on the current gain and the high frequency performance of a device with a conventional pyramidal structure. Grading is a...
| Main Author: | |
|---|---|
| Language: | English |
| Published: |
University of British Columbia
2010
|
| Online Access: | http://hdl.handle.net/2429/27886 |