The effect of base grading on the gain and high frequency performance of AlGaAs/GaAs heterojunction bipolar transistors
A comprehensive, one-dimensional, analytical model of the graded-base AlGaAs/GaAs heterojunction bipolar transistor is presented, and used to examine the influence of base grading on the current gain and the high frequency performance of a device with a conventional pyramidal structure. Grading is a...
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Language: | English |
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University of British Columbia
2010
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Online Access: | http://hdl.handle.net/2429/27886 |