Design of SiGe/Si quantum-well optical modulators
An electro-optic modulator containing a single SiGe/Si quantum-well has been designed for operation at λ₀= 1.55 µm. This single quantum-well modulator has a lower VπLπ than the 3 quantum-well modulator recently designed and optimized by Maine et al. for operation at λ₀= 1.31 µm, for which the VπLπ p...
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| Language: | English |
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University of British Columbia
2010
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| Online Access: | http://hdl.handle.net/2429/27904 |