FET upconverter design using load dependent mixing transconductance
The conversion gain of GaAs MESFET mixers is known to be dependent on the impedances seen by the applied signals and the resulting mixing products at all ports of the device. For an accurate representation, all these loading conditions should be considered; however, the design of gate and drain net...
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| Language: | English |
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University of British Columbia
2010
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| Online Access: | http://hdl.handle.net/2429/28499 |