Electrical and structural characterization of GaAs and Al Ga₋ As gr
The electrical and structural properties of GaAs and Al[formula omitted]Ga₁-[formula omitted]As grown by molecular beam epitaxy have been studied, including cross section morphology, aluminum mole fraction, and electrical transport properties. The film cross section has been investigated by selecti...
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| Language: | English |
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University of British Columbia
2010
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| Online Access: | http://hdl.handle.net/2429/29826 |