Studies of oxide desoption from GaAs by diffuse electron scattering and optical reflectivity
We have determined that the temperature for desorption of gallium oxide from GaAs increases linearly with oxide thickness, for oxide layers between about 6Å and 26Å thick. The temperature for the oxide desorption ranged from 580°C to 630°C. The wafer temperature was determined from the optical band-...
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| Language: | English |
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University of British Columbia
2010
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| Online Access: | http://hdl.handle.net/2429/30416 |