Configuration interaction in the internal acceptor states in silicon
The presence of configuration interaction, between the "internal" acceptor states of group III impurities in silicon and P₃⁄₂ band Bloch states, has been observed. The effect of impurity-impurity interaction on the line shape of the boron, gallium and indium internal acceptor lines has bee...
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| Language: | English |
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University of British Columbia
2011
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| Online Access: | http://hdl.handle.net/2429/34607 |