Infrared absorption in arsenic-doped silicon
The optical absorption line is 1s₁- 2p₀ at the absorption spectrum of arsenic doped silicon has been studied for various arsenic concentrations at four temperatures. The concentrations are .9 x 10¹⁵ cm⁻³, 1.7 x 10¹⁵ cm⁻³, 4.0 x 10¹⁵ cm⁻³ and 1.5 x 10¹⁶ cm⁻³, the temperatures are 4.2°K, 53°K, 77°K, a...
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| Language: | English |
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University of British Columbia
2011
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| Online Access: | http://hdl.handle.net/2429/37623 |