An experimental and theoretical investigation of the characterstics of dark illuminated junction diodes of germanium and silicon.
Measurements have been made on a variety of germanium and silicon junction diodes in order to determine departures from the ideal behavior both under illuminated and dark conditions. The diodes included alloyed, grown and diffused junction types and the experimental study was largely confined to for...
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| Language: | English |
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University of British Columbia
2012
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| Online Access: | http://hdl.handle.net/2429/40401 |