MODELING OF BIPOLAR TRANSISTOR TURNOFF (SECOND BREAKDOWN, FINITE-DIFFERENCE METHOD, POWER)
An isothermal, two-dimensional numerical calculation of the potential and current distribution in an n('+)-p-n-n('+) bipolar power transistor driving an inductive load during its turnoff transient has been carried out. The transistor is initially considered to be in a heavily saturated �...
| Main Author: | |
|---|---|
| Language: | ENG |
| Published: |
ScholarWorks@UMass Amherst
1986
|
| Subjects: | |
| Online Access: | https://scholarworks.umass.edu/dissertations/AAI8622680 |