Growth, fabrication, and device characterization of indium gallium arsenide channel gallium arsenide-based heterostructure field effect transistors
A study of InGaAs channel heterostructure field effect transistors (HFETs) on GaAs substrates was undertaken utilizing the low pressure organometallic chemical vapor phase epitaxial (OMVPE) growth technique. Excellent quality HFET material properties were obtained for a split level donor structure,...
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| Language: | ENG |
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ScholarWorks@UMass Amherst
1996
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| Online Access: | https://scholarworks.umass.edu/dissertations/AAI9619403 |