Model of MOSFET in Delphi
In modern times the increasing complexity of transistors and their constant decreasingsize require more effective techniques to display and interpret the processes that are inside of devices. In this work, we are modeling a two‐dimensional n‐MOSFET with a long channeland uniformly doped substrate. W...
| Main Authors: | , |
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| Format: | Others |
| Language: | English |
| Published: |
Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE)
2011
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| Subjects: | |
| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-14209 |