GaN HEMT and MMIC Design and Evaluation
Gallium Nitride based devices due to their inherent material properties are considered as one of the most promising devices to realize high power, high frequency transistors with lower power consumption in next-generation applications. Although the technology has been studied since early 1970s, ther...
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| Format: | Others |
| Language: | English |
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Högskolan i Gävle, Institutionen för teknik och byggd miljö
2008
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-3085 |