Integration of metallic source/drain contacts in MOSFET technology
The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-Fin...
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Format: | Doctoral Thesis |
Language: | English |
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KTH, Integrerade komponenter och kretsar
2010
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Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-13136 http://nbn-resolving.de/urn:isbn:978-91-7415-680-5 |