Integration of metallic source/drain contacts in MOSFET technology

Integration of metallic source/drain contacts in MOSFET technology

The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-Fin...

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Bibliographic Details
Main Author: Luo, Jun
Format: Doctoral Thesis
Language:English
Published: KTH, Integrerade komponenter och kretsar 2010
Subjects:
CMOS technology
MOSFET
Schottky barrier MOSFET
metallic source/drain
contact resistivity
NiSi
PtSi
SALICIDE
ultrathin silicide
FinFET
Semiconductor physics
Halvledarfysik
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-13136
http://nbn-resolving.de/urn:isbn:978-91-7415-680-5

Internet

http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-13136
http://nbn-resolving.de/urn:isbn:978-91-7415-680-5

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