Thermal simulations and design guidelines on multi-finger PAs based on 28nm FD-SOI technology
The electrical performance of Silicon-On-Insulator (SOI) devices can be dramatically enhanced in terms of reduced parasitic capacitances, leakage current and power consumption. On the other hand, self-heating effects (SHE) are more pronounced than in a bulk device because of the buried oxide which l...
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| Format: | Others |
| Language: | English |
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KTH, Skolan för informations- och kommunikationsteknik (ICT)
2013
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-142677 |