Fabrication and Characterization of Tunneling Oxides on Graphene
Graphene base transistors (GBTs) are known to be novel devices mingling outstanding properties of graphene, with the concept of hot electron transistors (HETs). According to theoretical calculations, GBTs were predicted to have over 5 orders of magnitude ON/OFF current ratios and THz frequency range...
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| Format: | Others |
| Language: | English |
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KTH, Mikroelektronik och tillämpad fysik, MAP
2013
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-143206 |