Formation of NiGeSn Material for Thermoelectric Applications
Group IV-based nanowires are excellent designed thermoelectric materials for high temperature applications. Ni silicide (germanide) has been widely used to reduce the contact resistance for group IV nanowires. In this work, the interaction of Ni with relaxed, compressive and tensile strained GeSn wa...
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| Format: | Others |
| Language: | English |
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KTH, Skolan för informations- och kommunikationsteknik (ICT)
2013
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-143781 |