Epitaxy and characterization of SiGeC layers grown by reduced pressure chemical vapor deposition
Heteroepitaxial SiGeC layers have attracted immenseattention as a material for high frequency devices duringrecent years. The unique properties of integrating carbon inSiGe are the additional freedom for strain and bandgapengineering as well as allowing more aggressive device designdue to the potent...
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| Format: | Others |
| Language: | English |
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KTH, Mikroelektronik och informationsteknik, IMIT
2004
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-1718 |