Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids
Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to oper...
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| Format: | Doctoral Thesis |
| Language: | English |
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KTH, Elektrisk energiomvandling
2015
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-173340 http://nbn-resolving.de/urn:isbn:978-91-7595-684-8 |