Process optimization for the 4H-SiC/SiO2 interface.
This thesis aims to optimize the process for the 4H-SiC/SiO2 interface formations. The experiments are made on metal-oxide-semiconductor (MOS) structures, where the semiconductor is an n-type epitaxially grown 4H-SiC thin film. The oxide is fabricated either with thermal oxidation, or by using plasm...
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| Format: | Others |
| Language: | English |
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KTH, Skolan för informations- och kommunikationsteknik (ICT)
2015
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-174842 |