Graphene growth on SiC under Arambient and H-intercalation
We grow epitaxial graphene on 6H-SiC (0001) substrates in Ar background and intercalatehydrogen to reform the carbon bu↵er layer into single and multilayered graphene. We willanalyze the graphene using a combination of techniques including optical microscopy,micro-Raman spectroscopy, Atomic Force Mi...
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| Format: | Others |
| Language: | English |
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KTH, Rymd- och plasmafysik
2015
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-177645 |