Fabrication and electrical characterization of Ge/GeOx/Al2O3/HfO2 MOS capacitors
Continuous scaling of complementary metal oxide semiconductor (CMOS) devices has led to constant increase in device performance. However, as scaling becomes more difficult with every technological node, alternative channel materials that could replace silicon (Si) are being investigated [1]. Germani...
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| Format: | Others |
| Language: | English |
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KTH, Skolan för informations- och kommunikationsteknik (ICT)
2016
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-204909 |