Development of 1.3-μm GaAs-based vertical-cavity surface-emitting lasers
Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) are desirable as low-cost sources for optical metropolitan-area and access networks. In the development of 1.3-µm VCSELs, most attention today is given to monolithic GaAs-based solutions, although no established active material exists...
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| Format: | Doctoral Thesis |
| Language: | English |
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KTH, Mikroelektronik och Informationsteknik, IMIT
2005
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-263 |